SiC and GaN stand center stage, controlling many different industries’ dynamics. With power management becoming a fundamental aspect of emerging electronics applications such as vehicle ...
NTT, Inc. has demonstrated amplification of high-frequency wireless signals using aluminum nitride (AlN)–based transistors. NTT, Inc. has achieved a world first by demonstrating amplification of ...
Wolfspeed announced Toyota will deploy its automotive-grade SiC MOSFETs to power onboard charging across its BEV lineup. While SiC is already well known for enabling fast switching, high efficiency, ...
Empower announced a new corporate headquarters in Milpitas, California, and a dedicated R&D center in Munich, Germany. Empower Semiconductor, an AI chipmaker based in Silicon Valley, has announced a ...
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In order to cover all power industry segments, this article also relies on analysis of a study done by Dr. Ray Ridley of Ridley Engineering based on input from his LinkedIn “Power Supplies” group. The ...
In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...
One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...
In sensorless control systems, the magnetic angle of the motor is estimated from the motor phase voltages and currents. Its position is determined by monitoring certain electrical parameters of the ...
With the increasing adoption of EVs and a growing focus on environmental sustainability, electric motors are expected to be used more extensively. Electric motors are the beating heart of sustainable ...
2024 has been a crucial year for the power electronics sector in terms of development, preparing for radical changes in 2025 and beyond. 2024 has been a crucial year for the power electronics sector ...
While the failure mechanisms in gallium nitride (GaN) high electron mobility transistors (HEMTs) have been widely studied and significant improvements made in their reliability, this field is still ...