Abstract: In this work, the robust single-event irradiation-hardened capability is demonstrated in a novel 4H-SiC split gate integrated PN MOSFET (SGPN-MOSFET). The gate of the proposed SiC MOSFET was ...
Abstract: In this paper, the single-event burnout (SEB) of the 1200V normally off trench-injected SiC JFETs is studied by the 2-D numerical simulations. The simulation results reveal that different ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback